www.siliconstandard.com 1 of 6 SSM9918H,j n-channel enhancement-mode power mosfet low on-resistance bv dss 20v capable of 2.5v gate drive r ds(on) 14m low drive current i d 45a surface mount package description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =125 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c thermal resistance junction-case max. 2.6 /w rthj-a thermal resistance junction-ambient max. 110 /w thermal data parameter storage temperature range total power dissipation 48 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.38 continuous drain current, v gs @ 4.5v 20 pulsed drain current 1 140 gate-source voltage continuous drain current, v gs @ 4.5v 45 parameter rating drain-source voltage 20 power mosfets from silicon standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 12 g d s to-251(j) g d s to-252(h) g d s re v . 2.01 6/26/2003 4 .com u datasheet
www.siliconstandard.com 2 of 6 ssm 9918h,j electrical characteristics @ t j =25 o c (unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v $bv dss / $t j breakdown voltage temperature coefficient reference to 25 #, i d =1ma - 0.1 - v/ # r ds(on) static drain-source on-resistance v gs =4.5v, i d =18a - - 14 m " v gs =2.5v, i d =9a - - 28 m " v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =10v, i d =18a - 26 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =20v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =- - na q g total gate charge 2 i d =18a - 19 - nc q gs gate-source charge v ds =20v - 1.5 - nc q gd gate-drain ("miller") charge v gs =5v - 10.5 - nc t d(on) turn-on delay time 2 v ds =10v - 7.5 - ns t r rise time i d =18a - 83 - ns t d(off) turn-off delay time r g =3.3 ", v gs =5v - 18 - ns t f fall time r d =0.56 " -23- ns c iss input capacitance v gs =0v - 500 - pf c oss output capacitance v ds =20v - 310 - pf c rss reverse transfer capacitance f=1.0mhz - 125 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 45 a i sm pulsed source current ( body diode ) 1 - - 140 a v sd forward on voltage 2 t j =25 #, i s =45a, v gs =0v - - 1.3 v notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. 12v 100 re v . 2.01 6/26/2003 4 .com u datasheet
www.siliconstandard.com 3 of 6 ssm 9918h,j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 0 40 80 120 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.0v v g =2.5v v g =3.0v v g =4.5v v g =3.5v 0 20 40 60 80 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v v g =2.5v v g =3.5v v g =4.5v v g =3.0v 10 12 14 16 18 20 22 24 26 123456 v gs (v) r dson (m " " " " ) i d =18a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =4.5v i d =18a re v . 2.01 6/26/2003 4 .com u datasheet
www.siliconstandard.com 4 of 6 ssm 9918h,j fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 0 10 20 30 40 50 60 0 50 100 150 t c , case temperature ( o c) p d (w) 1 10 100 1000 1 10 100 v ds (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 10us 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) re v . 2.01 6/26/2003 4 .com u datasheet
www.siliconstandard.com 5 of 6 ssm 9918h,j fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =15v v ds =20v v ds =10v 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 junction temperature ( o c ) v gs(th) (v) 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd (v) i f (a) t j =25 o c t j =150 o c 10 100 1000 10000 1 5 9 1 31 72 12 52 9 v ds (v) c (pf) f =1.0mhz ciss coss crss re v . 2.01 6/26/2003 4 .com u datasheet
www.siliconstandard.com 6 of 6 ssm 9918h,j in formation furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by im plication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties. fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 5 v d g s v ds v gs r g r d rated v ds to the oscilloscope - + d g s v ds v gs i d i g re v . 2.01 6/26/2003 4 .com u datasheet
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